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512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
WRITE Operation
Figure 30: WRITE-to-PRECHARGE
T0
T1
T2
T3
T4
T5
T6
CLK
t WR @ t CK ≥ 15ns
DQM
tRP
Command
WRITE
NOP
PRECHARGE
NOP
NOP
ACTIVE
NOP
Address
Bank a,
Col n
Bank
(a or all)
Bank a,
Row
t WR
DQ
D IN
n
D IN
n+1
t WR @ t CK < 15ns
DQM
tRP
Command
WRITE
NOP
NOP
PRECHARGE
NOP
NOP
ACTIVE
Address
Bank a,
Col n
Bank
(a or all)
Bank a,
Row
t WR
DQ
D IN
n
D IN
n+1
Don’t Care
Note:
1. In this example DQM could remain LOW if the WRITE burst is a fixed length of two.
Fixed-length WRITE bursts can be truncated with the BURST TERMINATE command.
When truncating a WRITE burst, the input data applied coincident with the BURST
TERMINATE command is ignored. The last data written (provided that DQM is LOW at
that time) will be the input data applied one clock previous to the BURST TERMINATE
command. This is shown in Figure 31 (page 60), where data n is the last desired data
element of a longer burst.
PDF: 09005aef8459c827
512mb_mobile_sdram_y67m_at.pdf – Rev. B 3/11 EN
59
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2011 Micron Technology, Inc. All rights reserved.
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